Transmission Electron Microscopy of Semiconductor Nanostructures

Transmission Electron Microscopy of Semiconductor Nanostructures: An Analysis of Composition and Strain State

Paperback Published on: 20/11/2013
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Synopsis

This book provides tools well suited for the

quantitative investigation of semiconductor electron microscopy. These tools allow for the accurate determination of the composition of ternary semiconductor

nanostructures with a spatial resolution at near atomic scales. The book

focuses on new methods including strain state

analysis as well as evaluation of the composition

via the lattice fringe analysis (CELFA) technique.

The basics of these procedures as well as their

advantages, drawbacks and sources of error are all

discussed. The techniques are applied to quantum

wells and dots in order to give insight into

kinetic growth effects such as segregation and

migration. In the first part of the book the fundamentals of

transmission electron microscopy are provided.

These are needed for an understanding of the

digital image analysis techniques described in the

second part of the book. There the reader will

find information on different methods of

composition determination. The third part of the

book focuses on applications such as composition

determination in InGaAs Stranski--Krastanov

quantum dots. Finally it is shown how an

improvement in the precision of the composition

evaluation can be obtained by combining CELFA with

electron holography. This is demonstrated for an

AlAs/GaAs superlattice.

  • Publisher: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
  • ISBN: 9783662146187
  • Number of pages: 241
  • Dimensions: 235 x 155 mm

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